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Product Brochure
| Wafer Diameter | 2 inch |
| Crystal Orientation | <100> |
| Material | Boron Oxide Doped Silicon Wafer |
| Country of Origin | Made in India |
| type | P-type |
| Thickness | 250-500 micron |
| CAS Number | 7440-21-3 |
| purity | 99.9% |
| Doping | Boron |
Product Name | Boron Oxide Doped Silicon Wafer |
CAS | 7440-21-3 |
Diameter (mm) | 2” (50.8 mm), also available in 3, 5, 6, 12″ |
Type | P Type |
Doping | Boron |
Crystal Orientation | <100> |
Thickness | 250-500 μm |
Surface | Single Side Polished |
ivityResist | 1-10 ohm-cm |
Crystal method | CZ |
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| Grade Standard | IP |
| Purity | 99% |
| Packaging Type | Drum |
| Material | WAFER |
| Brand | NANOCHEMAZONE |
| Country of Origin | Made in India |
| Product Code | NCZ-WM-0021 |
| Diameter | 150 mm ± 1mm (Ask for the customization) |
| Thickness | 500 µm (Ask for the customization) |
| Purity | 97.0 – 100% |
| Shape | Round (Ask for the customization) |
| pH | 5.0 – 7.5 |
| Starch & Dextrins | Absent |
| Organic Impurities | Absent |
| Water Solubility | < 0.2% |
| Arsenic | 2 ppm |
| Heavy Metals | 10 ppm |
| Sulphated Ash | 0.2% |
| Loss in Drying | 6% |
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Product Brochure
| Manufacturer | nanochemazone |
| Packaging Size | as per requirement |
| Purity | 99.9% |
| Brand | nanochemazone |
| Country of Origin | Made in India |
| ph | 5.0-7.5 |
|
Product Name |
Microcrystalline cellulose |
|
Diameter |
150 mm ± 1mm |
|
Thickness |
500 µm |
|
Purity |
97.0 – 100% |
|
Shape |
Round |
|
ph |
5.0 – 7.5 |
|
Water Solubility |
< 0.2% |
|
Arsenic |
2 ppm |
|
Heavy Metals |
0.2% |
|
Loss in Drying |
6% |
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Product Brochure
| Minimum Order Quantity | 1000 Gram |
| Material | SILICON WAFERS |
| Country of Origin | Made in India |
| purity | 99.9% |
| Packing | As per requirement |
| Packing Size | As per requirement |
| product | silicon wafer |
| Product Code | NCZ-WM-0020 |
| Diameter | 4 (101.6 mm), also available in 2, 3, 5, 6, 12 |
| Coating | Gold/Silver/Platinum/Chromium/Titanium/Silicon Nitride/ Aluminium (Ask for Coating Customization) |
| Crystal Orientation | <100> /other orientations are also available |
| Surface | Single/Both Side Polished |
| Thickness | 20-300 nm (customization is also possible) |
| Resistivity | 1-10 ohm-cm |
| Crystal method | CZ |
| RRG | 12 % |
| Oxygen Contents | 12.5-16.5 ppm |
| Carbon Contents | 1 ppm |
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Product Brochure
| Purity | 100 |
| Type of Water Dispenser | Reverse Osmosis Water Dispenser |
| Usage/Application | Industrial |
| Color | Black |
| Installation Type | Floor Mounted |
| Automation Grade | Semi-Automatic |
| Packaging size | 10*10 |
| Certification | ISI |
| Payment Method | Online |
| Country of Origin | Made in India |
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| Price | 1000 Rs per Pcs |
Product Name | Silicon Wafer Undoped |
CAS No. | 7440-21-3 |
Diameter | 4″ (100 mm), also available in 2, 3, 5, 6, 12″ |
Crystal Orientation | <100> |
Surface | Single Side Polished |
Thickness | 500 μm |
Resistivity | 1-10 ohm-cm |
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| Material | SILICON WAFER |
| Purity | 100 |
| Stock no | SR1236 |
| Capacity | 10TAN |
| Polished | YES |
| Country of Origin | Made in India |
| Product Code | NCZ-WM-0015 |
| CAS | 7440-21-3 |
| Diameter | 100 mm, also available in 2, 3, 5, 6, 12″ |
| Type | P/N Type, Undoped |
| Orientation | <100> /other orientations are also available |
| Surface | Single /Both Side Polished |
| Thickness | 400 μm, ask for other wafer thickness |
| Resistivity | 0.01-0.02 Ω-cm |
| SiO2 Thickness Layer | 200 nm (customization available) |
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| Purity | 100 |
| Stock no | 1221 |
| Capacity | 13241 |
| Polished | YES |
| Country of Origin | Made in India |
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Product Brochure
| Country of Origin | Made in India |
| CAS Number | 1303-86-2 |
| purity | 99.9% |
| APS | 50 nm |
| Form | nanopowder |
| Chemical Name | boron powder |
MF | B2O3 |
Chemical Name | Boron Oxide |
Purity | 99.9% |
APS | 50 nm(Size Customization possible) |
Form | Nano Powder |
CAS Number | 1303-86-2 |
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| Material | Phosphorus Doped Silicon Wafer |
| Country of Origin | Made in India |
| purity | 99.9% |
| Resistivity | 1-10 ohm-cm |
| type | N-type |
| Crystal Orientation | 100 |
Product Name | Phosphorus Doped Silicon Wafer |
Diameter | 4″ (101.6mm), also available in 2, 3, 5, 6, 12″ |
Type | N-Type |
Doping | Phosphorous, Antimony etc. (customization possible) |
Crystal Orientation | <100> |
Surface | Single Side Polished |
Thickness | 250-500 μm |
Resistivity | 1-10 ohm-cm |
Crystal method | CZ |
RRG | ≤12 % |
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| Material | Silicon Carbide Wafers N-Type |
| Country of Origin | Made in India |
| CAS Number | 409-21-2 |
| purity | 99.9% |
| type | N-type |
| Crystal Orientation | 100 |
Product Name | Silicon Carbide Wafers N-Type |
CAS No. | 409-21-2 |
Diameter | 12” (304.8 mm), also available in 2, 3, 4, 5, 6″ |
Crystal Orientation | <100> |
Surface | Single Side Polished |
Type | N-Type |
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| Country of Origin | Made in India |
| CAS Number | 7440-21-3 |
| purity | 99.9% |
| type | P-type |
| Resistivity | 1-10 ohm-cm |
| Thickness | 250-500 micron |
Product Name | Silicon Wafer 6 inch |
CAS No. | 7440-21-3 |
Diameter | 6” (152.4 mm), also available in 2, 3, 4, 5, 12″ |
Crystal Orientation | <100> |
Surface | Single Side Polished |
Type | P-Type |
Doping | Boron/Customization possible |
Thickness | 250-500 μm |
Resistivity | 1-10 ohm-cm |
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| Country of Origin | Made in India |
| CAS Number | 7440-21-3 |
| purity | 99.9% |
| Resistivity | 1-10 ohm-cm |
| Crystal method | cz |
| Surface | Single Side Polished |
|
Product Name |
Coated Silicon Wafer |
|
CAS No. |
7440-21-3 |
|
Diameter |
4” (101.6mm), also available in 2, 3, 5, 6, 12″ |
|
Crystal Orientation |
<100> |
|
Surface |
Single Side Polished |
|
Thickness |
275 μm |
|
Resistivity |
1-10 ohm-cm |
|
Crystal method |
CZ |
|
RRG |
≤12 % |
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| Country of Origin | Made in India |
| CAS Number | 7440-21-3 |
| purity | 99.9% |
| Crystal Orientation | 100 |
| Resistivity | 0.01-0.02 ohm-cm |
| Thickness | 400 micron |
Product Name | Silicon Wafer Silicon Dioxide Layer |
CAS No. | 7440-21-3 |
Diameter | 100 mm, also available in 2, 3, 5, 6, 12″ |
Crystal Orientation | <100> |
Surface | Single Side Polished |
Thickness | 400 μm |
Resistivity | 0.01-0.02 Ω-cm |
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Product Brochure
| Model Name/Number | NCZSPE105-19 |
| Material | ORION SCREEN PRINTED ELECTRODES |
| Product Code | NCZSPE105-19 |
| Diameter of WE | 2 mm, 3 mm, 4 mm , 5 mm |
| Size of RE | 0.5 x 1 mm |
| Ratio CE/WE Surface Area | 4/1 |
| Shape | Rectangle |
| Overall Dimension | 50 x 10mm |
| Thickness | 0.5mm |
| Thickness of Coated Material | 10 µm |
| Working Electrode | Graphite, Gold, Graphene, CNT, Platinum, Silver (customization possible) |
| Counter Electrode | Graphite, Gold, Silver |
| Reference Electrode | Ag/AgCl |
| Substrate | Valox FR1 |
| Packaging | 50, 100, 200, 500, 1000 Pcs |
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| Country of Origin | Made in India |
| CAS Number | 7440-56-4 |
| purity | 99.9% |
| type | N-type |
| Doping | N-type |
| Resistivity | 10.5 g/cm cube |
Product Name | Silicon Germanium Wafers |
CAS No. | 7440-56-4 |
Diameter | 50.8 mm, also available in 3, 5, 6, 12″ |
Crystal Orientation | <100> |
Surface | Both Side Polished |
Type | N-Type |
Doping | N-Type |
Wafer Thickness | 500 +/- 25 µm |
Resistivity | 10.5 g/cm³ |
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